A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...

Semiconductor industry researchers have been anticipating the need for better transistor channel materials to replace silicon for a long time, but silicon devices have continued to improve enough to ...

Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D DRAM. This development could lead to cheaper and faster memory by lowering ...

Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of ...

Scientists have created an n-channel transistor using diamond for the first time, potentially leading to faster components that can work in extreme conditions. When you purchase through links on our ...

Atomic-scale imperfections in graphene transistors generate unique wireless fingerprints that cannot be copied or predicted, ...

The chip industry is pushing the boundaries of innovation with the evolution of finFETs to gate-all-around (GAA) nanosheet transistors at the 3nm node and beyond, but it also is adding significant new ...

A limiting problem in creating energy-efficient circuits for improved memory and more powerful computers is manufacturing a transistor with reconfigurable properties. As the size of transistors ...

Semiconductor chips have been getting smaller and smaller every year since the 1960s, with double the number of transistors fitting into the same chip space each year following the predicted ...