the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...
Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D ...
CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...
MIT engineers have developed a magnetic transistor that could pave the way for smaller, faster, and more efficient electronics. By replacing silicon with a magnetic semiconductor, the team created a ...
Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...
ANN ARBOR—One month after announcing a ferroelectric semiconductor at the nanoscale thinness required for modern computing components, a team at the University of Michigan has demonstrated a ...
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